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Isoelectronic aluminum-doped gallium nitride alpha-voltaic cell with efficiency exceeding 4.5% - Communications Materials

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Isoelectronic aluminum-doped gallium nitride alpha-voltaic cell with efficiency exceeding 4.5% - Communications Materials

Although alpha-voltaic cells have shown great potential in unattended miniaturized systems for compact, long-lifetime and independence of external energy input, the power conversion efficiency of state-of the-art alpha-voltaic cells is still much lower than the theoretical limit. Here, an alpha-voltaic cell based on a gallium nitride transducer with PIN structure is designed and investigated. We

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Isoelectronic aluminum-doped gallium nitride alpha-voltaic cell with efficiency exceeding 4.5% - Communications Materials

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Isoelectronic aluminum-doped gallium nitride alpha-voltaic cell with efficiency exceeding 4.5% - Communications Materials

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