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Giant gate modulation of antiferromagnetic spin reversal by the magnetoelectric effect - NPG Asia Materials

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Giant gate modulation of antiferromagnetic spin reversal by the magnetoelectric effect - NPG Asia Materials

In this study, using the Pt/Cr2O3/Pt epitaxial trilayer, we demonstrate the giant voltage modulation of the antiferromagnetic spin reversal and the voltage-induced 180° switching of the Néel vector in maintaining a permanent magnetic field. We obtained a significant modulation efficiency of the switching field, Δμ0HSW/ΔV (Δμ0HSW/ΔE), reaching a maximum of −500 mT/V (−4.80 T nm/V); this value was more than 50 times greater than that of the ferromagnetic-based counterparts.

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Giant gate modulation of antiferromagnetic spin reversal by the magnetoelectric effect - NPG Asia Materials

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